Samsung Announced 128GB UFS 2.0 Flash Memory, the industry’s first 128-gigabyte (GB) ultra-fast embedded memory based on the much-anticipated Universal Flash Storage (UFS) 2.0 standard for next-generation flagship smartphones. The new embedded memory’s UFS 2.0 line is the most advanced JEDEC-compliant, next-generation flash memory storage requirement in the world.
UFS memory develops “Command Queue,” a technology that rushes the speed of command execution in SSDs through a serial interface, meaningfully growing data processing speeds related to the 8-bit parallel-interface-based eMMC standard. Samsung UFS memory manners 19,000 input/output operations per second (IOPS) for random reading, which is 2.7 times faster than the most common embedded memory for high-end smartphones today.
The eMMC 5.0. It also provides a successive read and write performance boost up to SSD levels. In adding to a 50 percent decline in energy consumption. The random read speed is 12 times faster than that of a typical high-speed memory card (which runs at 1,500 IOPS), and is likely to develop system performance.
The blazing fast UFS embedded memory works at 14,000 IOPS and is 28 times as fast as a conservative external memory card, making it capable of supporting continuous Ultra HD video playback and smooth multitasking functions at the same time.
To deliver more design flexibility to global customers, Samsung’s UFS embedded memory package, a new ePoP (embedded package on package) solution, can be loaded directly on top of a logic chip, taking approximately 50 percent less space.
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